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 BA157GP thru BA159GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
DO-204AL (DO-41)
Reverse Voltage 400 to 1000 V Forward Current 1.0 A
Features
1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA.
ted* aten P
0.205 (5.2) 0.160 (4.1)
(R)
1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA.
NOTE: Lead diameter is 0.026 (0.66)
* Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * For use in high frequency rectifier circuits * Fast switching for high efficiency * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 Ampere operation at TA=55C with no thermal runaway * Typical IR less than 0.1A * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
for suffix "E" part numbers
0.023 (0.58)
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.3 gram
Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.
Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55C Peak forward surge current 10ms single half sine-wave superimposed on rated load at TA=25C Typical thermal resistance (NOTE 1) Operating junction and storage temperature range Symbols BA157GP BA158GP BA159DGP BA159GP VRRM VRMS VDC IF(AV) IFSM RJA TJ, TSTG 400 280 400 600 420 600 1.0 20 55 - 65 to +175 800 560 800 1000 700 1000 Units V V V A A C/W C
Electrical Characteristics
Parameter
Ratings at 25C ambient temperature unless otherwise specified.
Symbols BA157GP BA158GP BA159DGP BA159GP VF IR trr CJ 150 250 15 1.3 5.0 500 500
Units V A ns pF
Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage TA=25C Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz
Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
Document Number 88537 06-Mar-02
www.vishay.com 1
BA157GP thru BA159GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Average Forward Rectified Current (A)
1.0 20
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
TA = 25C 10ms Single Half Sine-Wave At Rated Load 15
Resistive or Inductive Load 0.8
0.6
10
0.4
0.2 0.375" (9.5mm) Lead Length 0 25 50 75 100 125 150 175
5
0 1 10 100
Ambient Temperature (C)
Number of Cycles at 50 HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
10 20
Fig. 4 - Typical Reverse Characteristics
Instantaneous Reverse Current (A)
10 TJ = 125C
Instantaneous Forward Current (A)
1
1 TJ = 75C 0.1
0.1
TJ = 25C Pulse Width = 300s 1% Duty Cycle
TJ = 25C 0.01 0 20 40 60 80 100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
100
100
Fig. 6 - Typical Transient Thermal Impedance
Transient Thermal Impedance (CW)
Junction Capacitance (pF)
TJ = 25C f = 1.0MHZ Vsig = 50mVp-p
10
10
1
1
1
10
Reverse Voltage (V)
100
0.1 0.01
0.1
1
10
100
t, Pulse Duration (sec.) Document Number 88537 06-Mar-02
www.vishay.com 2
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